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| N-Channel JFET Monolithic Dual CORPORATION SST440 / SST441 FEATURES DESCRIPTION Calogic's SST440 Series is a high speed N-Channel Monolithic Dual JFET in a surface mount SO-8 package. This device is well suited for use as wideband differential amplifiers in test and measurement applications. The combination of high gain, low leakage and low noise make it an excellent performer. ORDERING INFORMATION Part SST440-1 Package Plastic SO-8 Temperature Range -55oC to +150oC * High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical * Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical * Low Noise * Surface Mount Package * Differential Wideband Amplifiers * VHF/UHF Amplifiers * Test and Measurement APPLICATIONS NOTE: For Sorted Chips in Carriers, See U440 Series PIN CONFIGURATION SO-8 TOP VIEW (1) S1 (2) D1 (3) G1 (4) N/C N/C (8) G2 (7) D2 (6) S2 (5) CJ1 PRODUCT MARKING SST440 SST441 SST440 SST441 SST440 / SST441 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS IG PD Limit -25 -25 50 300 500 2.4 4 -55 to 150 -55 to 150 300 Unit V V mA mW mW mW/ oC mW/ oC o C o C o C TJ Tstg TL ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL STATIC V(BR)GSS VGS(OFF ) IDSS IGSS Gate-Source Breakdown Voltage Gate-Source Cut off Voltage Saturation Drain Current Gate Reverse Current 2 CHARACTERISTCS TYP1 SST440 MIN MAX SST441 MIN MAX UNIT TEST CONDITIONS -35 -3.5 15 -1 -0.2 -25 -1 6 -6 30 -500 -25 -1 6 -6 30 -500 V mA pA nA IG = -1A, VDS = 0V VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VGS = -15V, VDS = 0V TA = 125 oC VDG = 10V, ID = 5mA TA = 125 oC IG = 1mA, VDS = 0V IG VGS(F) DYNAMIC gfs gos gfs gos Ciss Crss en MATCHING | VGS1-VGS2| | VGS1-VGS2| T IDSS1 IDSS2 gfs1 gfs2 CMRR Gate Operating Current Gate-Source Forward Voltage -1 -0.2 0.7 -500 -500 pA nA V Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage 6 20 5.5 30 3.5 1 4 4.5 9 200 4.5 9 200 mS S mS S pF nV/ Hz VDG = 10V, ID = 5mA f = 1kHz VDG = 10V, ID = 5mA f = 100MHz VDG = 10V, ID = 5mA f = 1MHz VDG = 10V, ID = 5mA f = 10kHz Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratio Transconductance Ratio Common Mode Rejection Ratio 7 10 10 0.98 0.98 90 10 20 mV V/ oC VDG = 10V, ID = 5mA T = -55 to 25oC VDG =10V, T = 25 to 125oC ID = 5mA VDS = 10V, VGS = 0V VDG = 10V, ID = 5mA f= 1 kHz dB VDD = 5 to 10V, ID = 5mA NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300s, duty cycle 3%. |
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